inchange semiconductor product specification silicon npn power transistors 2sc2591 2SC2592 description ? with to-220 package ? complement to type 2sa1111/1112 ? good linearity of h fe ?high v ceo applications ? for audio frequency, high power amplifiers application pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2sc2591 150 v cbo collector-base voltage 2SC2592 open emitter 180 v 2sc2591 150 v ceo collector-emitter voltage 2SC2592 open base 180 v v ebo emitter-base voltage open collector 5 v i c collector current 1 a i cm collector current-peak 1.5 a p c collector power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2sc2591 2SC2592 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sc2591 150 v (br)ceo collector-emitter breakdown voltage 2SC2592 i c =0.1ma ,i b =0 180 v v ebo emitter-base breakdown voltage i e =10 | a ,i c =0 5 v v cesat collector-emitter saturation voltage i c =0.5a; i b =50ma 0.5 2.0 v v besat base-emitter saturation voltage i c =0.5a; i b =50ma 1.0 2.0 v i cbo collector cut-off current v cb =120v; i e =0 1 | a i ebo emitter cut-off current v eb =4v; i c =0 1 | a h fe-1 dc current gain i c =150ma ; v ce =10v 90 330 h fe-2 dc current gain i c =500ma ; v ce =5v 50 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 20 pf f t transition frequency i c =50ma ; v ce =10v 200 mhz ? h fe-1 classifications q r s 90-155 130-220 185-330
inchange semiconductor product specification 3 silicon npn power transistors 2sc2591 2SC2592 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2sc2591 2SC2592
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